GB/T 12965-2018_English: PDF (GB/T12965-2018)
Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
GB/T 12965-2018 | English | 199 |
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Monocrystalline silicon as cut wafers and lapped wafers
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GB/T 12965-2018
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GB/T 12965-2005 | English | 359 |
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Monocrystalline silicon as cut slices and lapped slices
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GB/T 12965-2005
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GB/T 12965-1996 | English | 319 |
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Monocrystalline silicon as cut slices and lapped slices
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GB/T 12965-1996
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GB 12965-1991 | English | 239 |
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Monocrystalline silicon as cut slices and lapped slices
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GB 12965-1991
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Standard ID | GB/T 12965-2018 (GB/T12965-2018) | Description (Translated English) | Monocrystalline silicon as cut wafers and lapped wafers | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H82 | Classification of International Standard | 29.045 | Word Count Estimation | 10,152 | Date of Issue | 2018-09-17 | Date of Implementation | 2019-06-01 | Older Standard (superseded by this standard) | GB/T 12965-2005 | Drafting Organization | Research Institute Semiconductor Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Shanghai Hejing Silicon Materials Co., Ltd., Zhejiang Jinrui Technology Co., Ltd., Tianjin Huanou Semiconductor Materials Technology Co., Ltd., Zhejiang Silicon Materials Quality Inspection Center | Administrative Organization | National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch (SAC/TC 203/SC 2) | Regulation (derived from) | National Standard Announcement No. 11 of 2018 | Proposing organization | National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch (SAC/TC 203/SC 2) | Issuing agency(ies) | State Administration of Markets and China National Standardization Administration | Standard ID | GB/T 12965-2005 (GB/T12965-2005) | Description (Translated English) | Monocrystalline silicon as cut slices and lapped slices | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H82 | Classification of International Standard | 29.045 | Word Count Estimation | 9,943 | Date of Issue | 2005-09-19 | Date of Implementation | 2006-04-01 | Older Standard (superseded by this standard) | GB/T 12965-1996 | Quoted Standard | GB/T 1550; GB/T 1552; GB/T 1554; GB/T 1555; GB/T 2828.1; GB/T 6616; GB/T 6618; GB/T 6620; GB/T 6624; GB/T 11073; GB/T 12962; GB/T 12964; GB/T 13387; GB/T 13388; GB/T 14140; GB/T 14844; YS/T 26; | Drafting Organization | Beijing Nonferrous Metal Research Institute | Administrative Organization | National Nonferrous Metals Standardization Technical Committee | Regulation (derived from) | Announcement of Newly Approved National Standards No. 12 of 2005 (total 86) | Proposing organization | China Nonferrous Metals Industry Association | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People Republic of China, China National Standardization Administration Committee | Summary | This standard specifies: monocrystalline silicon cutting discs and grinding pieces (referred to as wafers) product classification, terminology, technical requirements, test methods, test rules and signs, packaging, transportation and storage. This standard applies to: cut-doped silicon single crystal by the Czochralski, Floating Zone Melting and neutron transmutation turn, double-sided ground preparation round wafers. Products are mainly used in the production of transistors, rectifiers and other semiconductor devices, or further processed into polished. | Standard ID | GB/T 12965-1996 (GB/T12965-1996) | Description (Translated English) | Monocrystalline silicon as cut slices and lapped slices | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H82 | Classification of International Standard | 29.045 | Word Count Estimation | 8,887 | Date of Issue | 1996/11/4 | Date of Implementation | 1997/4/1 | Older Standard (superseded by this standard) | GB 12965-1991 | Regulation (derived from) | Announcement of Newly Approved National Standards 2005 No. (No. 86 overall) 12 | Proposing organization | China Nonferrous Metals Industry Corporation | Issuing agency(ies) | State Bureau of Technical Supervision |
GB/T 12965-2018
Monocrystalline silicon as cut wafers and lapped wafers
ICS 29.045
H82
National Standards of People's Republic of China
Replace GB/T 12965-2005
Silicon single crystal cutting sheet and abrasive sheet
Published on.2018-09-17
2019-06-01 implementation
State market supervision and administration
China National Standardization Administration issued
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 12965-2005 "silicon single crystal cutting sheet and abrasive sheet", compared with GB/T 12965-2005, in addition to editorial
The main technical changes outside the revision are as follows.
--- The scope will be "this standard applies to the circle prepared by straight-drawing, suspension zone melting and neutron enthalpy-doped silicon single crystal by cutting and double-side grinding.
"Shaped silicon wafer" was changed to "This standard applies to straight preparation by the Czochralski method, the suspension zone melting method (including neutron enthalpy doping and gas phase doping).
Circular silicon single crystal cutting sheets and abrasive sheets having a diameter of not more than.200 mm" (see Chapter 1, Chapter 1 of the.2005 edition);
--- GB/T 1552, GB/T 1554, GB/T 12964 have been deleted from the normative reference documents, and GB/T 1551 has been added.
GB/T 6619, GB/T 26067, GB/T 29507, GB/T 32279, GB/T 32280, YS/T 28 (see Chapter 2,.2005)
Chapter 2 of the annual edition);
--- Deleted the specific terminology and changed it to "The terms and definitions defined in GB/T 14264 apply to this document" (see Chapter 3,.2005).
Chapter 3 of the annual edition);
--- Removed the classification according to the silicon single crystal growth method, and added "the silicon wafer is divided into commonly used {100}, {111} according to the surface orientation.
{110} three" (see 4.2.2, version 4.1 of.2005);
--- Combine "physical performance parameters" and "crystal integrity" into "physical and chemical properties" (see 5.1,.2005, 5.1, 5.3);
--- Added "electrical performance" (see 5.2);
--- Revised the allowable deviation of the diameter of 50.8mm, 125mm, 150mm silicon wafers, revised 100mm, 125mm, 150mm
The thickness of the diameter cutting piece, revised the warpage requirements of 150mm and.200mm diameter silicon wafers (see Table 1,.2005 edition)
Table 1);
--- Increased the requirements for the curvature of the silicon (see Table 5.3);
--- Increased the main reference surface diameter and the size of the slit (see Figure 1);
--- Revised the surface orientation of the silicon wafer as "the surface orientation of the silicon wafer is {100}, {110}, {111}, commonly used {100}, {111}" (see
5.4.1, 5.4.1 of the.2005 edition;
--- Added "other crystal orientation requirements not included, determined by the supply and demand sides" (5.4.3);
--- Deleted "Whether the silicon wafer is used to make the reference surface, determined by the user" and "The orientation and position of the silicon master and sub-reference planes should conform to Table 2 and
The provisions of Table 1" (see 5.4.3, 5.4.4 of the.2005 edition);
--- Increase the position of the main and sub-reference surface positions of the silicon wafer with a diameter of not more than 150mm (see Figure 2);
--- Revised the requirements for edge contours (see 5.6, 5.7 of.2005 edition);
--- Removed the rule that the circumference of each chipping of the silicon wafer is not more than 2mm, and the requirement for the chipping by the chamfered abrasive sheet is "≤
The 0.3mm" revision is "None" and the requirements for the radial extension of the collapse are listed in Table 4 (see Table 5.7.1, Table 4,.2005).
5.6.1);
--- Added another experimental method for resistivity, thickness and total thickness variation, warpage, and clarified the arbitration method (see 6.2, 6.5,
6.7,.2005 edition of 6.2, 6.11, 6.12);
--- Revised the measurement method of the diameter of the main reference plane of the silicon wafer (see 6.8, 6.7 of.2005 edition);
--- "Measurement of the size of the silicon wafer incision is determined by the supply and demand sides" revised to "measurement of the size of the incision according to the provisions of GB/T 26067"
(See 6.9, 6.8 of the.2005 edition);
--- Revised the inspection project and changed it to the mandatory inspection project and the project negotiated between the supplier and the buyer (see 7.3.1, 7.3.2, 7.3 of the.2005 edition);
--- Removed the sampling regulations for destructive inspection items (see 7.4.2 of the.2005 edition);
--- Added order form (or contract) content (see Chapter 9).
This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.
The Technical Subcommittee of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Yanyan Semiconductor Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Shanghai Hejing Silicon Materials Co., Ltd.
Zhejiang Jinrui Technology Co., Ltd., Tianjin Huanou Semiconductor Materials Technology Co., Ltd., Zhejiang Silicon Materials Quality Inspection Center.
The main drafters of this standard. Sun Yan, Lu Liyan, Lou Chunlan, Xu Xinhua, Zhang Haiying, Zhang Xueyu, Pan Jinping, Liu Zhuo.
The previous versions of the standards replaced by this standard are.
---GB/T 12965-1991, GB/T 12965-1996, GB/T 12965-2005.
Silicon single crystal cutting sheet and abrasive sheet
1 Scope
This standard specifies the grades and classifications, requirements, test methods, inspection rules, signs, and specifications of silicon single crystal cutting sheets and abrasive sheets (referred to as silicon wafers).
Packaging, transportation, storage, quality certificate and order form (or contract).
This standard is applicable to diameters of not more than.200mm prepared by Czochralski method, suspension zone melting method (including neutron enthalpy doping and gas phase doping).
Round silicon single crystal cutting sheets and abrasive sheets. Products are mainly used to make transistors, rectifier devices, etc., or further processed into polished sheets.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1551 silicon single crystal resistivity determination method
GB/T 1555 semiconductor single crystal orientation determination method
GB/T 2828.1-2012.Sampling procedures for sampling by sampling - Part 1 . Batch-by-batch inspections by Retrieving Quality of Acceptance (AQL)
plan
GB/T 6616 Semiconductor silicon wafer resistivity and silicon film sheet resistance test method Non-contact eddy current method
GB/T 6618 silicon wafer thickness and total thickness variation test method
GB/T 6619 silicon wafer bending test method
GB/T 6620 silicon wafer warpage non-contact test method
GB/T 6624 silicon polishing sheet surface quality visual inspection method
GB/T 11073 Silicon wafer radial resistivity change measurement method
GB/T 12962 silicon single crystal
GB/T 13387 Silicon and other electronic materials wafer reference surface length measurement method
GB/T 13388 silicon wafer reference surface crystallographic orientation X-ray test method
GB/T 14140 silicon wafer diameter measurement method
GB/T 14264 semiconductor material terminology
GB/T 14844 semiconductor material grade representation
GB/T 26067 wafer incision size test method
GB/T 29507 Wafer flatness, thickness and total thickness change test automatic non-contact scanning method
GB/T 32279 wafer order form input specification
GB/T 32280 wafer warpage test automatic non-contact scanning method
YS/T 26 wafer edge contour inspection method
YS/T 28 wafer packaging
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
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